wuxi nce power semiconductor co., ltd page v1.1 1 NCE8205B pb free product http://www.ncepower.com nce n-channel enhancement mode power mosfet description the NCE8205B uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application. general features v ds = 20v,i d = 6.5a r ds(on) < 27m ? @ v gs =2.5v r ds(on) < 22m ? @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package application battery protection load switch power management g1 d2 g2 s2 d1 s1 schematic diagram marking and pin assignment tssop-8 top view package marking and ordering information device marking device device package reel size tape width quantity 8205b NCE8205B tssop-8 ?330mm 12mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v drain current-continuous i d 6.5 a drain current-pulsed (note 1) i dm 25 a maximum power dissipation p d 1.5 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 83 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 - - v zero gate voltage drain current i dss v ds =20v,v gs =0v - - 1 a
wuxi nce power semiconductor co., ltd page v1.1 2 NCE8205B pb free product http://www.ncepower.com gate-body leakage current i gss v gs =12v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.5 0.7 1.2 v v gs =4.5v, i d =4.5a - 15 22 m ? drain-source on-state resistance r ds(on) v gs =2.5v, i d =3.5a - 19 27 m ? forward transconductance g fs v ds =5v,i d =4.5a - 10 - s dynamic characteristics (note4) input capacitance c lss - 900 - pf output capacitance c oss - 220 - pf reverse transfer capacitance c rss v ds =10v,v gs =0v, f=1.0mhz - 100 - pf switching characteristics (note 4) turn-on delay time t d(on) - 10 20 ns turn-on rise time t r - 11 25 ns turn-off delay time t d(off) - 35 70 ns turn-off fall time t f v dd =10v,i d =1a v gs =4.5v,r gen =6 ? - 30 60 ns total gate charge q g - 12 15 nc gate-source charge q gs - 2.3 - nc gate-drain charge q gd v ds =10v,i d =6a, v gs =4.5v - 1 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1.7a - 0.75 1.2 v diode forward current (note 2) i s - - 6.5 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production
wuxi nce power semiconductor co., ltd page v1.1 3 NCE8205B pb free product http://www.ncepower.com typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a)
wuxi nce power semiconductor co., ltd page v1.1 4 NCE8205B pb free product http://www.ncepower.com vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance(m ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a)
wuxi nce power semiconductor co., ltd page v1.1 5 NCE8205B pb free product http://www.ncepower.com vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a)
wuxi nce power semiconductor co., ltd page v1.1 6 NCE8205B pb free product http://www.ncepower.com tssop-8 package information dimensions in millimeters symbol min max d 2.900 3.100 e 4.300 4.500 b 0.190 0.300 c 0.090 0.200 e1 6.250 6.550 a 1.100 a2 0.800 1.000 a1 0.020 0.150 e 0.65(bsc) l 0.500 0.700 h 0.25(typ) 1 7
wuxi nce power semiconductor co., ltd page v1.1 7 NCE8205B pb free product http://www.ncepower.com attention any and all nce power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce power representative nearest you before us ing any nce power products described or contained herein in such applications. nce power assumes no responsibility for equipment failu res that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and al l nce power products described or contained herein. specifications of any and all nce powe r products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the custom er?s products or equipment. to verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. strives to supply hi gh-quality high-reliability pr oducts. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures includ e but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be repr oduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce power believes information herein is accu rate and reliable, but no guar antees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specificati on" for the nce power product that you intend to use. this catalog provides information as of sep.2010. specific ations and information herein are subject to change without notice.
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